丝印：6B；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

文件：438.56 Kbytes 页数：29 Pages

RENESAS

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SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：308.43 Kbytes 页数：27 Pages

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes 页数：27 Pages

CEL

丝印：6B；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

文件：438.56 Kbytes 页数：29 Pages

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes 页数：27 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：308.43 Kbytes 页数：27 Pages

NEC

瑞萨

Package：6-SMD，扁平引线；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP GP 2.4GHZ 6-MINIMOLD

CEL