UPC8152TB-E3中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 Ω wideband matched IC. These low current amplifiers operate on 3.0 V.

These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.

FEATURES

• Supply voltage : VCC = 2.4 to 3.3 V

• Low current consumption : µPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V

µPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V

µPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V

• High efficiency : µPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz

µPC8151TB ; PO(1 dB) = +2.5 dBm TYP. @f = 1 GHz

µPC8152TB ; PO(1 dB) = −4.5 dBm TYP. @f = 1 GHz

• Power gain : µPC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz

µPC8152TB ; GP = 23 dB TYP. @f = 1 GHz

• Excellent isolation : µPC8128TB ; ISL = 39 dB TYP. @f = 1 GHz

: µPC8151TB ; ISL = 38 dB TYP. @f = 1 GHz

: µPC8152TB ; ISL = 40 dB TYP. @f = 1 GHz

• Operating frequency : 100 to 1 900 MHz (Output port LC matching)

• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

• Light weight : 7 mg (Standard value)

APPLICATION

• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones