SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

文件：138.91 Kbytes 页数：16 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

文件：448.08 Kbytes 页数：54 Pages

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丝印：C2U；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

文件：448.08 Kbytes 页数：54 Pages

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瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

文件：138.91 Kbytes 页数：16 Pages

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

文件：138.91 Kbytes 页数：16 Pages

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

文件：154.32 Kbytes 页数：7 Pages

NEC

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SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

文件：287.78 Kbytes 页数：52 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

文件：513.809 Kbytes 页数：54 Pages

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瑞萨

丝印：C2U；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

文件：513.809 Kbytes 页数：54 Pages

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

文件：287.78 Kbytes 页数：52 Pages

NEC

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