DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

文件：342.56 Kbytes 页数：12 Pages

NEC

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Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

文件：614.3 Kbytes 页数：11 Pages

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Ultra-Low Noise, High-Speed, Wide Band, Dual Operational Amplifier

The μPC4570 is a high-performance version of the general-purpose low-noise operational amplifier μPC258, 4558. Various characteristics such as band and slew rate, including input equivalent noise, were greatly improved in comparison to μPC258 and 4558. It is also possible to operate the amplifier wi • Equivalent Input Noise Voltage (f = 1kHz ) 4.5nV/√Hz (TYP.)\n• Total Harmonic Distortion Rate (f = 20Hz ~ 20kHz) 0.002% (TYP.)\n• Slew Rate 7V/µs (TYP.)\n• Gain Bandwidth Product GBW (f = 100kHz) 15MHz (TYP.)\n• Input Offset Voltage ±0.3mV (TYP.)\n• Operating Ambient Temperature -40 °C ~ +85 °;

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瑞萨

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

文件：342.56 Kbytes 页数：12 Pages

NEC

瑞萨

Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

文件：614.3 Kbytes 页数：11 Pages

RENESAS

瑞萨

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

文件：342.56 Kbytes 页数：12 Pages

NEC

瑞萨

Ultra Low-Noise, High Speed, Wide Band, Dual Operational Amplifier

FEATURES  Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.)  Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 (TYP.)  Slew Rate 7 V/μs (TYP.)  Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.)  Input Offset Voltage ±0.3 mV (TYP.)  Operating Ambient Temperatur

文件：614.3 Kbytes 页数：11 Pages

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瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Ultra low noise : en = 4.5 nV/√Hz • High slew rate : 7 V/μs • High gain bandwidth product : GBW = 15 MHz at 100 kHz • Internal frequency compensation

文件：272.08 Kbytes 页数：12 Pages

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瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Ultra low noise : en = 4.5 nV/√Hz • High slew rate : 7 V/μs • High gain bandwidth product : GBW = 15 MHz at 100 kHz • Internal frequency compensation

文件：272.08 Kbytes 页数：12 Pages

RENESAS

瑞萨

DUAL ULTRA LOW-NOISE,WIDEBAND,OPERATIONAL AMPLIFIER

[NEC] SEMICONDUCTOR SELECTION GUIDE

文件：342.56 Kbytes 页数：12 Pages

NEC

瑞萨