3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt

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NEC

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3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION\nThe UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt su • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical\n• HIGH OUTPUT POWER:\n   PSAT = +12.5 dBm at 900 MHz\n               +11 dBm at 1500 MHz\n• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum\n• SUPER SMALL PACKAGE\n• TAPE AND REEL PACKAGING OPTION AVAILABLE;

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3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

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NEC

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3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

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3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

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NEC

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