UPC2757TB-E3数据手册RF/IF射频/中频RFID的射频混频器规格书PDF

描述 Description

DESCRIPTION
The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency down converter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The µPC2757TB features low current consumption and the µPC2758TB features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size.
The µPC2757TB and µPC2758TB are manufactured using NEC’s 20 GHz fT NESAT™||| silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.FEATURES
• Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz
• High-density surface mounting : 6-pin super minimold package
• Low current consumption : ICC = 5.6 mA TYP. @ µPC2757TB
                                      ICC = 11 mA TYP. @ µPC2758TB
• Supply voltage : VCC = 2.7 to 3.3 V
• Minimized carrier leakage : Due to double balanced mixer
• Equable output impedance : Single-end push-pull IF amplifier
• Built-in power save functionAPPLICATIONS
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): µPC2758TB
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): µPC2757TB

特性 Features

• Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz
• High-density surface mounting : 6-pin super minimold package
• Low current consumption : ICC = 5.6 mA TYP. @ µPC2757TB
                                      ICC = 11 mA TYP. @ µPC2758TB
• Supply voltage : VCC = 2.7 to 3.3 V
• Minimized carrier leakage : Due to double balanced mixer
• Equable output impedance : Single-end push-pull IF amplifier
• Built-in power save function