UPA861TD-T3-A规格书行情报价瑞萨CEL-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA861TD-T3-A	文件：271.83 Kbytes Page：11 Pages	NPN SILICON RF TWIN TRANSISTOR 文件：271.83 Kbytes 页数：11 Pages	CEL	CEL
UPA861TD-T3	文件：388.65 Kbytes Page：30 Pages	NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase di 文件：388.65 Kbytes 页数：30 Pages	RENESAS 瑞萨	RENESAS
UPA861TD-T3	文件：129.4 Kbytes Page：10 Pages	NECs NPN SILICON RF TWIN TRANSISTOR DESCRIPTION NECs UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation. The NE687 is an excellent buffer transistor, featuring low noise and high gain. NECs new ultra s 文件：129.4 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
UPB1507GV-E1-A	文件：0 bytes Page：0 Pages	RENESAS SSOP8	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPB1509GV-E1	文件：0 bytes Page：0 Pages	NEC SOP	NEC 瑞萨上传：深圳市鸿昌盛电子科技有限公司	NEC

更多UPA861TD-T3-A供应商更新时间2025-10-11 16:01:00