UPA841TD中文资料瑞萨数据手册PDF规格书

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5435, 2SC5600)

Q1: Built-in high-gain transistor

fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase distortion transistor suited for OSC operation

fT = 5.0 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• 6-pin lead-less minimold package