UPA2826T1S数据手册Renesas中文资料规格书

描述 Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性 Features

• VDSS = 20 V (TA = 25°C)
• Low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
• 2.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日uPA2826T1S Data SheetPDF211 KB数据手册2012年12月25日功率MOS FET 功率MOS FET使用时的注意事项PDF1.60 MB其他2008年2月7日功率MOS FET 应用例子PDF721 KB其他2008年2月7日可靠性手册PDF15.93 MB其他2007年9月26日Addhidden documents 项目info: For device-specific or order-specific documentation, submit a support request.developer_board设计和开发模型ECAD 模块Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.扩展 ECAD 模块 产品选择Loading products for parametric search...产品选择导出settings切换fullscreen全屏settings_backup_restore重置help小贴士器件号
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