MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2802 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Built-in gate protection diod

文件：375.51 Kbytes 页数：9 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2802 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Built-in gate protection diod

文件：375.51 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2802 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Built-in gate protection diod

文件：375.51 Kbytes 页数：9 Pages

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