Single-Channel Gate Driver for Enhancement Mode GaN Transistors

文件：608.36 Kbytes 页数：11 Pages

UPI

力智电子

Single-Channel Gate Driver for Enhancement Mode GaN Transistors

文件：608.36 Kbytes 页数：11 Pages

UPI

力智电子

Single-Channel Gate Driver forEnhancement Mode GaN Transistors

The uP1964 is designed to high-speed low-side driver forenhancement mode Gallium Nitride (GaN) transistors andMOSFETs application. With high source and sink outputcurrent capability, the uP1964 offers enhanced immunityagainst Miller turn-on effect.The uP1964 has two separate gate outputs allowingind • Independent Source and Sink Outputs for Controllable Rise and Fall Times \n• Fast Rise/Fall Times (6.7ns/3.9ns, Typical) \n• 6V to 13.2V Single Supply Range \n• Hysteretic-Logic Thresholds for High-Noise Immunity \n• RoHS Compliant and Halogen Free;

uPI(UBIQ)

力智电子

Single-Channel Gate Driver forEnhancement Mode GaN Transistors

The uP1964 is designed to high-speed low-side driver forenhancement mode Gallium Nitride (GaN) transistors andMOSFETs application. With high source and sink outputcurrent capability, the uP1964 offers enhanced immunityagainst Miller turn-on effect.\n\n The uP1964 has two separate gate outputs a • Independent Source and Sink Outputs for Controllable Rise and Fall Times\n• Fast Propagation Delays (30ns, Typical)\n• Fast Rise/Fall Times (6.7ns/3.9ns, Typical)\n• Integrated LDO for Adjustable Gate Driver Output Voltage Level\n• 6V to 13.2V Single Supply Range\n• CMOS Compatible Input-Logic Thr;

uPI(UBIQ)

力智电子