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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UPG2110TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2110TB	文件：149.27 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz	CEL California Eastern Labs	CEL
UTCM2110	文件：93.83 Kbytes Page：3 Pages	LINEARINTEGRATEDCIRCUIT	UTCUnisonic Technologies 友顺友顺科技股份有限公司	UTC
V2110B	文件：46.53 Kbytes Page：1 Pages	Finger-shapedheatsinkTO-126	ASSMANN ASSMANN WSW COMPONENTS	ASSMANN
VDA2110CTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司	ANASEM
VDA2110NTA	文件：1.30402 Mbytes Page：18 Pages	Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein	ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司	ANASEM
VN2110	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2110ND	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2110	文件：761.51 Kbytes Page：14 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
VP2110	文件：512.809 Kbytes Page：5 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi	SUTEX Supertex, Inc	SUTEX

详细参数

型号：
UNR2110Q
功能描述：
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	UNR2111	Panasonic	16+	Mini3-G3-B	34300	鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!	询价
齐创科技(上海,北京,青岛)有限公司	UNR2111	PANASONIC	23+	SOT23	30000	原装正品,假一罚十	询价
深圳兆威电子有限公司	UNR2111	PANASONI	23+	SOT-23	63000	原装正品现货	询价
中天科工半导体（深圳）有限公司	UNR2111	Panasonic	20+	Mini3-G3-B	36800	原装优势主营型号-可开原型号增税票	询价
深圳市英瑞尔电子科技有限公司	UNR2111	Panasonic	24+	Mini3-G3-B	34300	原装现货假一赔十	询价
深圳市创新迹电子有限公司	UNR2111	Panasonic	2022+	Mini3-G3-B	20000	只做原装进口现货.假一罚十	询价
深圳市一线半导体有限公司	UNR2111(TX)	Panasonic/松下	24+	SOT-23	9200	新进库存/原装	询价
深圳市芯诚实创科技有限公司	UNR2111(TX)	Panasonic/	2022	SOT-23	9200	全新原装现货热卖	询价
深圳市威尔健半导体有限公司	UNR2111-(TX)	PANASONIC/松下	23+	SOT23	50000	全新原装正品现货,支持订货	询价
深圳市得捷芯城科技有限公司	UNR2111-(TX)	PANASON/松下	24+	NA/	15250	原装现货,当天可交货,原型号开票	询价

更多UNR2110Q供应商更新时间2025-5-23 8:30:00

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