High-Voltage, High-Current Darlington Arrays

[FCI] DESCRIPTION The UNL2803/2804 series are high-voltage, high-current darington array comprised of eight NPN darington pairs. All units feature integral clamp diodes for switching inductive loads. FEATURES • Output current .........................500mA • High Sustaining Voltage ........

文件：219.64 Kbytes 页数：5 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

FCI

富加宜

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d

文件：373.78 Kbytes 页数：9 Pages

RENESAS

瑞萨

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • S

文件：48.51 Kbytes 页数：6 Pages

SANYO

三洋

Ultra low dropout, 800mA, CMOS LDO

文件：768.8 Kbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司