Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

文件：175.97 Kbytes 页数：13 Pages

Panasonic

松下

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA621TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)

文件：295.36 Kbytes 页数：10 Pages

RENESAS

瑞萨

Medium and high temperature setting type

Application/ Scanner, Printer, Copier, etc.

文件：100.01 Kbytes 页数：1 Pages

ASAHI