NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment.FEATURES:\n· PG = 7.5 dB Typical at 400 MHz\n· Internal Input Matching Network\n· Omnigold™ Metalization System

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

文件：22.24 Kbytes 页数：2 Pages

ASI

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

文件：106.01 Kbytes 页数：8 Pages

NEC

瑞萨

VTP Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response.

文件：25.76 Kbytes 页数：1 Pages

PERKINELMER

VTP Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and fast speed of response.

文件：26.93 Kbytes 页数：1 Pages

PERKINELMER