ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 页数：4 Pages

MICROSEMI

美高森美

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 页数：4 Pages

MICROSEMI

美高森美

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

文件：52.18 Kbytes 页数：8 Pages

NEC

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L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

文件：111.84 Kbytes 页数：14 Pages

NEC

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