ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 页数：4 Pages

MICROSEMI

美高森美

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：50.9 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on)=3Ω * Low threshold voltage

文件：22.43 Kbytes 页数：1 Pages

ZETEX

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

ZETEX