64K X 8 BIT HIGH SPEED CMOS SRAM

General Description The UM61512A is a low operating current 524,288-bit static random access memory organized as 65,536 words by 8 bits and operates on a single 5V power supply. It is built using UMCs high performance CMOS process. Features ■ Single +5V power supply ■ Access times: 15/20/

文件：164.29 Kbytes 页数：16 Pages

UMC

联电

64K X 8 BIT HIGH SPEED CMOS SRAM

General Description The UM61512A is a low operating current 524,288-bit static random access memory organized as 65,536 words by 8 bits and operates on a single 5V power supply. It is built using UMCs high performance CMOS process. Features ■ Single +5V power supply ■ Access times: 15/20/

文件：164.29 Kbytes 页数：16 Pages

UMC

联电

64K X 8 BIT HIGH SPEED CMOS SRAM

[Utron]

文件：148.69 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

5.1ch Electronic Volume

6ch Electric Volume with 6 Input Selector FEATURE • 6 Input Selector (6ch+MUTE) • Input Gain Control (0/3/6/9dB) • INPUT ATT (0/-5dB) • 6ch Dependent Electronic Volume (6ch 0~-87dB,-∞) FL,FR,C,SL,SR,SWch • 2 Lines REC Output (for one thing built in mute switch) • Built in Bass Boost

文件：254.56 Kbytes 页数：13 Pages

MITSUBISHI

三菱电机

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

description The TISP61511D and TISP61512P are dual forward-conducting buffered p-gate overvoltage protectors. They are designed to protect monolithic Subscriber Line Interface Circuits, SLICs, against overvoltages on the telephone line caused by lightning, ac power contact and induction. The TISP

文件：210.01 Kbytes 页数：11 Pages

POINN

64K X 8 BIT HIGH SPEED CMOS SRAM

General Description The UM61512A is a low operating current 524,288-bit static random access memory organized as 65,536 words by 8 bits and operates on a single 5V power supply. It is built using UMCs high performance CMOS process. Features ■ Single +5V power supply ■ Access times: 15/20/

文件：164.29 Kbytes 页数：16 Pages

UMC

联电