UM6001中文资料HF-UHF Medium & High Power PIN Diodes数据手册Microchip规格书

描述 Description

These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz.The low resistance of the UM6200 is useful in applications where forward bias current must be minimized. Because of its thick I-region width and long lifetime the UM6000 and UM6600 have been used in distortion sensitive and high peak power applications, including receiver protectors, TACN, and IFF equipment. Their low capacitance allows them to be useful as attenuator diodes at frequencies greater than 1 GHz. The UM6200 has been used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi POWER PIN diode package. It has been used successfully in many microwave applications using coaxial, microstrip, and stripline techniques at frequencies beyond XBand. The “B” and “E” style leaded packages offer the highest available power dissipation for a package this small. They have been used extensively as series switch elements in microstrip circuits. The “C” style package duplicates the physical outline available in conventional ceramic-metal packages but incorporates the many reliability advantages of the Microsemi construction.

简介

UM6001属于分立半导体产品的二极管-射频。由Microchip制造生产的UM6001二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。