首页 >UM3753其他IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSFIELDEFFECTTRANSISTOR Description TheμPA3753GRisDualN-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. Features •Dualchiptype •Lowon-stateresistance ⎯RDS(on)=56mΩMAX.(VGS=10V,ID=2.5A) ⎯RDS(on)=72mΩMAX.(VGS=4.5V,ID=2.5A) •Lowgatecharge ⎯QG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSINTEGRATEDCIRCUIT FEATURES •Validphotocell:2088pixels •Photocellpitch:14μm •Peakresponsewavelength:550nm(green) •Resolution:8dot/mmB4(257×364mm)size(shorterside) •Highresponsesensitivity •Lownoise •Driveclocklevel:CMOSoutputunder+5Voperation •Datarate:2MHzM | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
2088PIXELSCCDLINEARIMAGESENSORWITHPERIPHERALCIRCUIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2088-BITCCDLINEARIMAGESENSORWITHPERIPHERALCIRCUIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2088-BITCCDLINEARIMAGESENSORWITHPERIPHERALCIRCUIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSINTEGRATEDCIRCUIT FEATURES •Validphotocell:2088pixels •Photocellpitch:14μm •Peakresponsewavelength:550nm(green) •Resolution:8dot/mmB4(257×364mm)size(shorterside) •Highresponsesensitivity •Lownoise •Driveclocklevel:CMOSoutputunder+5Voperation •Datarate:2MHzM | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
2088PIXELSCCDLINEARIMAGESENSORWITHPERIPHERALCIRCUIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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