ESD Array Series

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N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-Trench Power MOSFET

文件：518.35 Kbytes 页数：6 Pages

VBSEMI

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：140.31 Kbytes 页数：4 Pages

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P-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：144.86 Kbytes 页数：4 Pages

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