丝印：UHB50SC12E1BC3N；Package：E1B；1200V-50A SiC Half-Bridge Module

Features * On-resistance: RDS(on) = 19mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 495nC * Low body diode voltage: VFSD= 1.2V * Low gate charge: QG = 85nC * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * ESD protected: HBM class 2 and CDM c

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QORVO

威讯联合

Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, 19 mohm, 1200V

The UHB50SC12E1BC3N contains an 19 mohm/1200V JFET half bridge in EB1 package. The SiC JFET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive char

ONSEMI

安森美半导体

DIP2

nichicon

尼吉康

上传：深圳市美盛芯微电子有限公司

DIP2

nichicon

尼吉康

上传：深圳市美盛芯微电子有限公司

SOT-23-3L

UTC(友顺)

上传：深圳广友电子有限公司