Surface Mount Ultrafast Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 20

文件：83.25 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Ultrafast Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE

文件：83.29 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Ultrafast Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE

文件：83.29 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 2.5A DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 1A DO220AA

Vishay General Semiconductor - Diodes Division