Ultra-Fast Recovery Diodes 10A FRD Pt

Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical A

文件：721.95 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：152.32 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：79.09 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：152.32 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司