256K x 1 DRAM

Description Addressing The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS

文件：224.31 Kbytes 页数：13 Pages

ZMD

256K x 1 DRAM

Description\nAddressing\nThe UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS edge t ❐ Dynamic random access memory 262144 x 1 bit manufactured using a CMOS technology\n❐ RAS access times 70 ns, 80 ns\n❐ TTL-compatible\n❐ Three-state output\n❐ 256 refresh cycles 4 ms refresh cycle time\n❐ FAST PAGE MODE\n❐ Operating modes: Read, Write, Read - Write, RAS only Refresh, Hidden Refresh ;

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瑞萨

256K x 1 DRAM

Description Addressing The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS

文件：224.31 Kbytes 页数：13 Pages

ZMD

256K x 1 DRAM

Description Addressing The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS

文件：224.31 Kbytes 页数：13 Pages

ZMD

256K x 1 DRAM

Description Addressing The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS

文件：224.31 Kbytes 页数：13 Pages

ZMD

256K x 1 DRAM

Description Addressing The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS

文件：224.31 Kbytes 页数：13 Pages

ZMD