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UCD7232RTJT集成电路(IC)的栅极驱动器规格书PDF中文资料

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厂商型号

UCD7232RTJT

参数属性

UCD7232RTJT 封装/外壳为20-WFQFN 裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 20QFN

功能描述

Digital Control Compatible Synchronous-Buck Gate Driver With Current Sense and Fault Protection
IC GATE DRVR HALF-BRIDGE 20QFN

丝印标识

UCD7232

封装外壳

QFN(RTJ) / 20-WFQFN 裸露焊盘

文件大小

1.42432 Mbytes

页面数量

34

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2025-11-20 23:00:00

人工找货

UCD7232RTJT价格和库存,欢迎联系客服免费人工找货

UCD7232RTJT规格书详情

UCD7232RTJT属于集成电路(IC)的栅极驱动器。由德州仪器制造生产的UCD7232RTJT栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能,这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备(通常为 FET 或 IGBT)。任何特定设备提供的确切功能各不相同,但与它适合驱动的半导体配置相关。

FEATURES

• Dual High Current Drivers.

• Full Compatibility with TI Fusion Digital Power

Supply Controllers, such as UCD91xx and

UCD92xx Families

• Operational to 2 MHz Switching Frequency

• High-Side FET and Output Current Limit

Protection with Independently Adjustable

Thresholds

• Fast High-Side Overcurrent Sense Circuit with

Fault Flag Output – Prevents Catastrophic

Current Levels on a Cycle-by-Cycle Basis

• Differential High-Gain Current Sense Amplifier

• Voltage Proportional to Load Current Monitor

Output

• Wide Input Voltage Range: 4.7 V to 15 V

Operation to 2.2 V Input Supported with an

External 4.5-6.5 V Bias Supply

• Onboard Regulated Supplies for Gate Drive

and Internal Circuits

• Integrated Thermal Shutdown

• Selectable Operation Modes:

– PWM plus Synchronous Rectifier Enable

(SRE) with Automatic Dead-Time Control

– Direct High-Gate and Low-Gate Inputs for

Direct FET Control

• 3-State PWM Input for Power Stage Shutdown

• UVLO Housekeeping Circuit

• Rated from –40°C to +125°C Junction

Temperature

APPLICATIONS

• Digitally-Controlled Synchronous-Buck Power

Stages for Single- and Multi-Phase

Applications

• Digitally-Controlled Power Modules

DESCRIPTION

The UCD7232 high current driver is specifically designed for digitally-controlled, point-of-load,

synchronous buck switching power supplies. Two

driver circuits provide high charge and discharge

current for the high-side NMOS switch and the

low-side NMOS synchronous rectifier in a

synchronous buck circuit. The MOSFET gates are

driven by an internally regulated VGG supply. The

internal VGG regulator can be disabled to permit the

user to supply their own gate drive voltage. This

flexibility allows a wide power conversion input

voltage range of 2.2 to 15 V. Internal under voltage

lockout (UVLO) logic insures VGG is good before

allowing chip operation.

A drive logic block allows operation in one of two

modes selected by the SRE Mode pin. In

Synchronous Mode, the logic block uses the PWM

signal to control both the high-side and low-side gate

drive signals. Dead time is automatically adjusted to

prevent cross conduction. The Synchronous Rectifier

Enable (SRE) pin controls whether or not the low-side

FET is turned on when the PWM signal is low. In

Independent Mode, the PWM and SRE pins control

the high-side and low-side gates directly. No

anti-cross-conduction logic is used in this mode.

On-board comparators monitor the voltage across the

high side switch and the voltage across an external

current sense element to safeguard the power stage

from sudden high current loads. Blanking delay is set

for the high side comparator by a single resistor in

order to avoid false reports coincident with switching

edge noise. In the event of a high-side fault or an

over-current fault, the high-side FET turned off and

the Fault Flag (FLT) is asserted to alert the digital

controller. The fault thresholds are independently set

by the HS Sense and ILIM pins.

Output current is measured and monitored by a

precision, high gain, switched capacitor differential

amplifier that processes the voltage present across

an external current sense element. The amplified

signal is available for use by the digital controller on

the IMON pin. The current sense amplifier has output

offset of 0.5 V so that both positive (sourcing) and

negative (sinking) current can be sensed.

产品属性

更多
  • 产品编号:

    UCD7232RTJT

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.7V ~ 15V

  • 逻辑电压 - VIL,VIH:

    0.8V,2V

  • 电流 - 峰值输出(灌入,拉出):

    4A,4A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    27ns,21ns

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    20-WFQFN 裸露焊盘

  • 供应商器件封装:

    20-QFN(4x4)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 20QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
QFN-20-EP(4x4)
1083
深耕行业12年,可提供技术支持。
询价
TI/德州仪器
25+
QFN-20
12496
TI/德州仪器原装正品UCD7232RTJT即刻询购立享优惠#长期有货
询价
TI/德州仪器
21+
QFN-20
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
TI(德州仪器)
24+
N/A
6000
原厂原装,价格优势,欢迎洽谈!
询价
TI/德州仪器
2450+
WQFN(RTJ)20
9850
只做原厂原装正品现货或订货假一赔十!
询价
TI
22+
20QFN
9000
原厂渠道,现货配单
询价
TI/德州仪器
25+
QFN-20
860000
明嘉莱只做原装正品现货
询价
TI
25+
QFN (RTJ)
6000
原厂原装,价格优势
询价
Texas Instruments
23+
1000
原装正品现货,德为本,正为先,通天下!
询价
TI/德州仪器
25+
QFN-20
14152
全新原装正品支持含税
询价