UCC5880-Q1_V01中文资料德州仪器数据手册PDF规格书

1 Features

• Dual-output driver with real time variable drive

strength

– ±15A and ±5A drive current outputs

– Digital input pins (GD*) for drive strength

adjustment without SPI

– 3 resistor settings R1, R2, or R1||R2

– Integrated 4A active Miller clamp or optional

external drive for Miller clamp transistor

• Primary-side and secondary-side active short

circuit (ASC) support

• Under-voltage and over-voltage protection on

internal and external supplies

• Driver die temperature sensing and over

temperature protection

• Short-circuit protection:

– 110ns response time to DESAT event

– DESAT protection – selections up to 14V

– Shunt resistor based short-circuit (SC) and

over-current (OC) protection

– Configurable protection threshold values and

blanking times

– Programmable soft turn-off (STO) and two-level

soft turn-off (2STO) current

• Integrated 10-bit ADC

– Able to measure power switch temperature, DC

Link voltage, driver die temperature, DESAT pin

voltage, VCC2 voltage

– Programmable digital comparators

• Advanced VCE/VDS clamping circuit

• Functional Safety-Compliant

– Developed for functional safety applications

– Documentation available to aid ISO 26262

system design up to ASIL D

• Integrated diagnostics:

– Built in self-test (BIST) for protection

comparators

– Gate threshold voltage measurement for power

device health monitoring

– INP to transistor gate path integrity

– Internal clock monitoring

– Fault alarm and warning outputs (nFLT*)

– ISO communication data integrity check

• SPI based device reconfiguration, verification,

supervision, and diagnosis

• 150V/ns CMTI

• AEC-Q100 qualified with the following results:

– Device temperature grade 1: -40°C to +125°C

ambient operating temperature

– Device HBM ESD classification level 2

– Device CDM ESD classification level C2b

2 Applications

• EV and HEV traction inverter

• EV and HEV power modules

3 Description

The UCC5880-Q1 device is an isolated, highly

configurable adjustable drive strength gate driver

targeted to drive high power SiC MOSFETs and

IGBTs in EV/HEV applications. Power transistor

protections are included, such as shunt resistor based

over-current, over-temperature (PTC, NTC, or diode),

and DESAT detection, with selectable soft turn-off

or two-level soft turn-off during these faults. An

integrated 10-bit ADC enables monitoring of up to

2 analog inputs, VCC2, DESAT, and the gate driver

temperature for enhanced system management.

Diagnostics and detection functions are integrated to

simplify the design of ASIL compliant systems. The

parameters and thresholds for these features are

configurable using the SPI, which allows the device

to be used with nearly any SiC MOSFET or IGBT.