UCC57108B-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• Qualified for automotive applications

• AEC-Q100 qualified

– Device temperature grade 1

– Device HBM ESD classification level H1C

– Device CDM ESD classification level C6

• Typical 3A sink 3A source output currents

• DESAT protection with programmable delay

• Soft turn-off when fault happens

• Absolute maximum VDD voltage: 30V

• Input and enable pins capable of withstanding up

to –5V

• Tight UVLO thresholds for bias flexibility

• Typical 25ns propagation delay

• Self-protect driver with thermal shutsown function

• Wide bias voltage range

• Available in 5mm x 4mm SOIC8 package

• Operating junction temperature range of –40°C to

150°C

2 Applications

• HEV/EV PTC heaters

• Traction inverters

• Residential EV chargers

• Motor drives

• HVAC compressors

3 Description

The UCC5710x-Q1 is a single channel, highperformance

low-side IGBT/SiC gate driver for

high power automotive application such as PTC

heaters, traction inverter active discharge circuit

and other auxiliary subsystems.It offers protection

features including Under-voltage-lock-out (UVLO),

Desaturation protection (DESAT), FAULT report ,

and Thermal shutdown protection. UCC5710x-Q1

has a typical peak drive strength of 3A. and it

can handle –5V on its inputs, which improves

robustness in systems with moderate ground

bouncing. The inputs are independent of supply

voltage and can be connected to most controller

outputs for maximum control flexibility. Depending

on the different pin configuration, the wide voltage

range of bias supply is provided in UCC5710xB-Q1

accommodates bipolar voltage. Also, the seperate

high and low driver outputs (UCC5710xC-Q1) and

enable funtion (UCC5710xW-Q1) are provided. An

accurate 5V output is available with UCC5710xB-Q1

and UCC5710xC-Q1.