UCC57102B-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• Qualified for automotive applications

• AEC-Q100 qualified

– Device temperature grade 1

• Typical 3A sink 3A source output currents

• DESAT protection with programmable delay

• Soft turn-off when fault happens

• Absolute maximum VDD voltage: 30V

• Input and enable pins capable of withstanding up

to –5V

• Tight UVLO thresholds for bias flexibility

• Typical 26ns propagation delay

• Self-protect driver with thermal shutdown function

• Wide bias voltage range

• Available in 5mm × 4mm SOIC-8 package

• Operating junction temperature range of –40°C to

150°C

2 Applications

• HEV/EV PTC heaters

• Traction inverters

• Residential EV chargers

• Motor drives

• HVAC compressors

3 Description

The UCC5710x-Q1 is a single channel, highperformance

low-side IGBT/SiC gate driver for

high power automotive applications such as PTC

heaters, traction inverter active discharge circuit,

and other auxiliary subsystems. It offers protection

features including Under-voltage-lock-out (UVLO),

Desaturation protection (DESAT), FAULT report, and

thermal shutdown protection. The UCC5710x-Q1 has

a typical peak drive strength of 3A and it can

handle –5V on its inputs, which improves robustness

in systems with moderate ground bouncing. The

inputs are independent of supply voltage and

can be connected to most controller outputs

for maximum control flexibility. Depending on the

different pin configuration, the wide voltage range

of the bias supply provided in the UCC5710xB-Q1

accommodates bipolar voltage. Also, seperate high

and low driver outputs (UCC5710xC-Q1) and an

enable function (UCC5710xW-Q1) are provided. An

accurate 5V output is available with the UCC5710xBQ1

and UCC5710xC-Q1.