UCC5350-Q1中文资料适用于 IGBT/SiC FET 且具有米勒钳位的汽车类 3/5kVrms ±5A 单通道隔离式栅极驱动器数据手册TI规格书

描述 Description

The UCC5350-Q1 is a single-channel, isolated gate driver with 5-A source and 5-A sink minimum peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has a CLAMP pin to connect the transistor gate to an internal clamp to prevent false turn-on caused by Miller current.



The UCC5350-Q1 is available in a 4 mm SOIC-8 (D) or 8.5 mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3-kVRMS and 5-kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an optocoupler, the UCC5350-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

特性 Features

• 5-kVRMS and 3-kVRMS single-channel isolated gate driver
• Temperature grade 1
• CDM ESD classification level C6
• ±5-A minimum peak current drive strength
• Up to 33-V driver supply voltage
• Negative 5-V handling capability on input pins
• Isolation barrier life > 40 Years
• 7000-VPK isolation DWV and 4242-VPK isolation D per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1 (planned)
• CQC certification per GB4943.1-2011 D and DWV (planned)
• CMOS inputs
• Operating junction temperature: –40°C to +150°C