UCC38C52DR中文资料德州仪器数据手册PDF规格书

1 Features

• Undervoltage lockout options to support both Si

and SiC MOSFET applications

• 30-V VDD absolute maximum voltage

• 1-MHz maximum fixed frequency operation

• 50-μA startup current, 75-μA maximum

• Low operating current: 1.3 mA (at fOSC = 52 kHz)

• Fast 35-ns, cycle-by-cycle overcurrent limiting

• ±1-A peak driving current

• Rail-to-rail output

– 25-ns rise time

– 20-ns fall time

• ±1 accurate 2.5-V error amplifier reference

• Pin-to-pin compatible and drop-in replacement for

UCCx8C4x

• Functional Safety-Capable

– Documentation available to aid functional safety

system design

2 Applications

• General purpose single-ended DC-DC or off-line

isolated power converters

• Auxiliary power supply for solar power inverters,

motor drives, energy storage systems

• Isolated power supply for EV charging stations

3 Description

The UCCx8C5x family of devices are highperformance

current-mode PWM controllers that

can drive both Si and SiC MOSFETs in various

applications. The UCCx8C5x family is a more efficient

and robust version of the UCCx8C4x.

The UCCx8C5x family has new UVLO thresholds

that allow for reliable SiC MOSFET operation

(UCC28C56-59), in addition to existing UVLO

thresholds for continued Si MOSFET support

(UCCx8C50-55).

VDD absolute maximum voltage rating is extended

from 20 V to 30 V for optimally driving the gate of

20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also

allowing for the exclusion of an external LDO.