UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38433 Mbytes 页数：52 Pages

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德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38736 Mbytes 页数：52 Pages

TI

德州仪器

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

文件：3.20189 Mbytes 页数：48 Pages

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UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.27019 Mbytes 页数：51 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.39027 Mbytes 页数：53 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.46603 Mbytes 页数：56 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.20649 Mbytes 页数：56 Pages

TI

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汽车类 30V 低功耗电流模式 PWM 控制器，适用于 SiC，16V/12.5V UVLO，50% 占空比

UCC28C5x-Q1 系列器件为高性能电流模式 PWM 控制器，有利于 Si 和 SiC MOSFET 应用。UCC28C5x-Q1 系列具有六个 VDD UVLO 选项，VDD 绝对上限扩展至 30V，还降低了启动和运行电流。UCC28C5x-Q1 系列提供 UCC28C4x-Q1 的改进型版本。下表所示为比较结果。UCC28C5x-Q1 系列采用 8 引脚 SOIC (D) 封装。 • 具有符合 AEC-Q100 标准的下列特性： \n• 器件 HBM 分类等级 2：±2kV\n• 提供功能安全 \n• 28V VDD 建议上限工作等级 \n• SiC 和 SiC MOSFET 应用\n• 工作频率：1MHz\n• 在 52kHz 下工作电流低至 1.3 mA\n• 峰值驱动电流为 ±1A\n• 初始修整的 2.5V 误差放大器基准为 ±1%\n• 与 UCC28C4x-Q1 引脚对引脚兼容，可直接替代;

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