UCC28C57H-Q1

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1Features •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:-40⁰Cto125⁰C –DeviceHBMclassificationlevel2:±2kV –DeviceCDMclassificationlevelC4B:750V •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •28

UCC28C57H-Q1

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1Features •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:-40⁰Cto125⁰C –DeviceHBMclassificationlevel2:±2kV –DeviceCDMclassificationlevelC4B:750V •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •28

UCC28C57H-Q1

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1Features •UndervoltagelockoutoptionstosupportbothSi andSiCMOSFETapplications •30-VVDDabsolutemaximumvoltage •1-MHzmaximumfixedfrequencyoperation •50-μAstartupcurrent,75-μAmaximum •Lowoperatingcurrent:1.3mA(atfOSC=52kHz) •Fast35-ns,cycle-by-cycleoverc

UCC28C57H-Q1

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1Features •UndervoltagelockoutoptionstosupportbothSi andSiCMOSFETapplications •30-VVDDabsolutemaximumvoltage •1-MHzmaximumfixedfrequencyoperation •50-μAstartupcurrent,75-μAmaximum •Lowoperatingcurrent:1.3mA(atfOSC=52kHz) •Fast35-ns,cycle-by-cycleoverc

UCC28C57H-Q1

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1Features •UndervoltagelockoutoptionstosupportbothSi andSiCMOSFETapplications •30-VVDDabsolutemaximumvoltage •1-MHzmaximumfixedfrequencyoperation •50-μAstartupcurrent,75-μAmaximum •Lowoperatingcurrent:1.3mA(atfOSC=52kHz) •Fast35-ns,cycle-by-cycleoverc

UCC28C57H-Q1

汽车类 30V 低功耗电流模式 PWM 控制器，适用于 SiC，18.8V/15.5V UVLO，50% 占空比; • 支持 Si 和 SiC MOSFET 应用的欠压锁定选项\n• 30V VDD 绝对最大电压 \n• 1MHz 最大固定频率工作\n• 50µA 启动电流，最大值 75µA\n• 低工作电流：1.3mA（fOSC = 52kHz）\n• 高工作 TJ：150°C（最大值）\n• 35ns 快速逐周期过流限制\n• 峰值驱动电流为 ±1A\n• 轨到轨输出： \n• 25ns 上升时间\n• 20ns 下降时间\n \n• 精度为 ±1% 的 2.5V 误差放大器基准\n• 与 UCC28C4x-Q1 引脚对引脚兼容的可直接替代产品 \n• 提供功能安全 \n• 可帮助进行功能安全系统设计的文档 \n \n• 具有符合 AEC-Q100 标准的下列特性 \n• 器件温度等级 1：-40°C 至 125°C\n• 器件 HBM 分类等级 2：±2kV\n• 器件 CDM 分类等级 C4B：750 V;

UCC28C5x-Q1 系列器件为高性能电流模式 PWM 控制器，可用于驱动各种应用中的 Si 和 SiC MOSFET。UCC28C5x-Q1 系列是 UCC28C4x-Q1 的更高效、更稳健的版本。\n\n除持续支持 Si MOSFET 的现有 UVLO 阈值 (UCC28C50-55-Q1) 外，UCC28C5x-Q1 系列还具有可确保 SiC MOSFET 可靠运行的新 UVLO 阈值 (UCC28C56-59-Q1)。\n\nVDD 绝对最大额定电压从 20V 增加至 30V，便于以理想方式驱动 20Vgs、18Vgs 或 15Vgs SiC MOSFET 的栅极，同时可无需使用外部 LDO。

UCC28C57HQDRQ1

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1Features •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:-40⁰Cto125⁰C –DeviceHBMclassificationlevel2:±2kV –DeviceCDMclassificationlevelC4B:750V •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •28

UCC28C57HQDRQ1

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1Features •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:-40⁰Cto125⁰C –DeviceHBMclassificationlevel2:±2kV –DeviceCDMclassificationlevelC4B:750V •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •28