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UCC28C56L

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.46603 Mbytes 页数:56 Pages

TI

德州仪器

UCC28C56L

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.39027 Mbytes 页数:53 Pages

TI

德州仪器

UCC28C56L

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.27019 Mbytes 页数:51 Pages

TI

德州仪器

UCC28C56L

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

文件:3.20189 Mbytes 页数:48 Pages

TI

德州仪器

UCC28C56L

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

文件:3.19449 Mbytes 页数:47 Pages

TI

德州仪器

UCC28C56L

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.20649 Mbytes 页数:56 Pages

TI

德州仪器

UCC28C56LDR

丝印:28C56L;Package:SOIC;UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.46603 Mbytes 页数:56 Pages

TI

德州仪器

UCC28C56LDR

丝印:28C56L;Package:SOIC;UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.20649 Mbytes 页数:56 Pages

TI

德州仪器

UCC28C56L-Q1

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件:3.20649 Mbytes 页数:56 Pages

TI

德州仪器

UCC28C56L-Q1

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件:3.38433 Mbytes 页数:52 Pages

TI

德州仪器

技术参数

  • Control mode:

    Current

  • Duty cycle (max) (%):

    100

  • Switching frequency (max) (kHz):

    1000

  • Features:

    Adjustable switching frequency

  • UVLO thresholds on/off (V):

    18.8/14.5

  • Operating temperature range (°C):

    -40 to 125

  • Rating:

    Catalog

  • Gate drive (typ) (A):

    1

  • 封装:

    SOIC (D)

  • 引脚:

    8

  • 尺寸:

    29.4 mm² 4.9 x 6

供应商型号品牌批号封装库存备注价格
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
11000
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI
25+
SOIC-8
22360
样件支持,可原厂排单订货!
询价
TI
25+
SOIC-8
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州仪器
24+
SOIC8
60000
全新原装现货
询价
恩XP
22+
NA
5000
原装 渠道优势 实单联系
询价
更多UCC28C56L供应商 更新时间2026-1-23 15:16:00