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UCC28C51-Q1中文资料德州仪器数据手册PDF规格书
UCC28C51-Q1规格书详情
1 Features
• AEC-Q100 qualified with the following results:
– Device temperature grade 1: -40⁰C to 125⁰C
– Device HBM classification level 2: ±2 kV
– Device CDM classification level C4B: 750 V
• Functional Safety-Capable
– Documentation available to aid functional safety
system design
• 28-V VDD recommended max operating ratings
• Undervoltage lockout options
– Si and SiC MOSFET applications
• Operating frequency: 1 MHz
• 50-μA standby current, 75-μA maximum
• Low operating current of 1.3 mA at 52 kHz
• Fast 35-ns cycle-by-cycle over-current limiting
• ±1-A peak driving current
• Rail-to-rail output swings with 25-ns rise and 20-ns
fall times
• ±1 initial trimmed 2.5-V error amplifier reference
• Pin-to-pin compatible to UCC28C4x-Q1 and dropin
substitution
2 Applications
• OBC and DC/DC converter isolated bias power
supply
• Traction inverter HV to LV backup supply
• HVAC compressor HV isolated power supply
• Single-ended DC converters in AC and DC EV
charging equipment isolated power supply
3 Description
The UCC28C5x-Q1 family of devices are high
performance current-mode PWM controllers helping
both Si and SiC MOSFETs applications. The
UCC28C5x-Q1 family has six VDD UVLO options,
with VDD abs max extended to 30 V, and reduced
startup and operation currents. The UCC28C5x-Q1
family provides improved version of UCC28C4x-
Q1. The table below shows the comparison. The
UCC28C5x-Q1 family is offered in the 8-pin SOIC (D)
package.