UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38736 Mbytes 页数：52 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.46603 Mbytes 页数：56 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.39027 Mbytes 页数：53 Pages

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38433 Mbytes 页数：52 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.20649 Mbytes 页数：56 Pages

TI

德州仪器

汽车类 30V 低功耗电流模式 PWM 控制器，7V/6.6V UVLO，100% 占空比

UCC28C5x-Q1 系列器件为高性能电流模式 PWM 控制器，可用于驱动各种应用中的 Si 和 SiC MOSFET。UCC28C5x-Q1 系列是 UCC28C4x-Q1 的更高效、更稳健的版本。\n\n除持续支持 Si MOSFET 的现有 UVLO 阈值 (UCC28C50-55-Q1) 外，UCC28C5x-Q1 系列还具有可确保 SiC MOSFET 可靠运行的新 UVLO 阈值 (UCC28C56-59-Q1)。\n\nVDD 绝对最大额定电压从 20V 增加至 30V，便于以理想方式驱动 20Vgs、18Vgs 或 15Vgs SiC MOSFET 的栅极，同时可无需使用外部 • 具有符合 AEC-Q100 标准的下列特性： \n• 器件 HBM 分类等级 2：±2kV\n• 提供功能安全 \n• 28V VDD 建议上限工作等级 \n• SiC 和 SiC MOSFET 应用\n• 工作频率：1MHz\n• 在 52kHz 下工作电流低至 1.3 mA\n• 峰值驱动电流为 ±1A\n• 初始修整的 2.5V 误差放大器基准为 ±1%\n• 与 UCC28C4x-Q1 引脚对引脚兼容，可直接替代;

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38736 Mbytes 页数：52 Pages

TI

德州仪器