UCC27523DSDTG4.B中文资料德州仪器数据手册PDF规格书

1 Features

• Industry-standard pinout

• Two independent gate-drive channels

• 5A peak source and sink-drive current

• Independent-enable function for each output

• TTL and CMOS compatible logic threshold

independent of supply voltage

• Hysteretic-logic thresholds for high noise immunity

• Inputs and enable pin-voltage levels not restricted

by VDD pin bias supply voltage

• 4.5V to 18V single-supply range

• Outputs held low during VDD-UVLO, (ensures

glitch-free operation at power up and power down)

• Fast propagation delays (13ns typical)

• Fast rise and fall times (7ns and 6ns typical)

• 1ns typical delay matching between two channels

• Two outputs are in parallel for higher drive current

• Outputs held low when inputs floating

• PDIP (8), SOIC (8), MSOP (8) PowerPAD™ and

3mm × 3mm WSON-8 package options

• Operating temperature range of –40°C to 140°C

2 Applications

• Switched-mode power supplies

• DC-DC converters

• Motor control, solar power

• Gate drive for emerging wide band-gap power

devices such as GaN

3 Description

The UCC2752x family of devices are dual-channel,

high-speed, low-side gate-driver devices capable

of effectively driving MOSFET and IGBT power

switches. Using a design that inherently minimizes

shoot-through current, UCC2752x can deliver highpeak

current pulses of up to 5A source and 5A

sink into capacitive loads along with rail-to-rail drive

capability and extremely small propagation delay

(typically 13ns). In addition, the drivers feature

matched internal propagation delays between the

two channels. These delays are very well suited for

applications requiring dual-gate drives with critical

timing, such as synchronous rectifiers. This also

enables connecting two channels in parallel to

effectively increase current-drive capability or driving

two switches in parallel with one input signal.

The input pin thresholds are based on TTL and

CMOS compatible low-voltage logic, which is fixed

and independent of the VDD supply voltage. Wide

hysteresis between the high and low thresholds offers

excellent noise immunity.