UCC27444-Q1_V01中文资料德州仪器数据手册PDF规格书

1 Features

• Qualified for automotive applications

• AEC-Q100 qualified with the following results:

– Device temperature grade 1: –40°C to +125°C

ambient operating temperature range

– Device HBM ESD classification level H2

– Device CDM ESD classification level C6

• Typical 4-A peak source and sink drive current for

each channel

• INA and INB input pins capable of handling –5 V

• Absolute maximum VDD voltage 20 V

• Wide VDD operating range from 4.5 V to 18 V

• Two independent gate drive channels

• Independent enable function for each output

• Fast propagation delays (18-ns typical)

• Fast rise and fall times (11-ns and 7-ns typical)

• 1-ns typical delay matching between the two

channels

• SOIC8 and VSSOP8 PowerPAD™ package

options

• Operating junction temperature range of –40°C to

125°C

2 Applications

• Switched-mode power supplies (SMPS)

• Power factor correction (PFC) circuits

• DC/DC converter

• AC inverter and VF drives

• Micro inverter

• DC fast charging stations

3 Description

The UCC27444-Q1 is a dual-channel, high-speed,

low-side gate driver that effectively drives MOSFET

and GaN power switches. UCC27444-Q1 has a

typical peak drive strength of 4 A, which reduces

rise and fall times of the power switches, lowers

switching losses, and increases efficiency. The

device's fast propagation delay (18-ns typical) yields

better power stage efficiency by improving the

deadtime optimization, pulse width utilization, control

loop response, and transient performance of the

system.

The UCC27444-Q1 can handle –5 V at its INx inputs,

which improves robustness in systems with moderate

ground bouncing. The inputs can be connected to

most controller outputs for maximum control flexibility.

An independent enable signal allows the power stage

to be controlled independently of main control logic. In

the event of a system fault, the gate driver can quickly

shut-off by pulling enable low. Many high-frequency

switching power supplies exhibit noise at the gate

of the power device, which can get injected into the

output pin on the gate driver and can cause the driver

to malfunction. The device's transient reverse current

and reverse voltage capability allow it to tolerate noise

on the gate of the power device or pulse-transformer

and avoid driver malfunction.

The UCC27444-Q1 also features low voltage

operation and power on reset (POR) for improved

system robustness. When there is not enough bias

voltage to fully enhance the power device, the gate

driver output is held low by the strong internal pull

down MOSFET.