UCC27211AQDDARQ1集成电路（IC）的栅极驱动器规格书PDF中文资料

1 Features

• AEC-Q100 Qualified for Automotive Applications:

Device Temperature Grade 1

• –40°C to +150°C junction temperature range

• Drives two N-channel MOSFETs in high-side and

low-side configuration with independent inputs

• Maximum boot voltage 120V DC

• 3.7A source, 4.5A sink output currents

• Input pins can tolerate –10V to +20V and are

independent of supply voltage range

• TTL compatible inputs

• 8V to 17V VDD operating range, (20V ABS MAX)

• 7.2ns rise and 5.5ns fall time with 1000pF load

• Fast propagation delay times (20ns typical)

• 4ns delay matching

• Symmetrical undervoltage lockout for high-side

and low-side driver

• Available in the industry standard SO-PowerPAD

SOIC-8 package

2 Applications

• Automotive DC/DC converters and OBC

• 2-wheeler and 3-wheeler traction drive and battery

pack

• Electric power steering (EPS)

• Wireless charging

• Smart glass module

3 Description

The UCC27211A-Q1 device driver is based on the

popular UCC27201 MOSFET drivers; but, this device

offers several significant performance improvements.

The peak output pullup and pulldown current has

been increased to 3.7A source and 4.5A sink and

thereby allows for driving large power MOSFETs

with minimized switching losses during the transition

through the Miller Plateau of the MOSFET. The

input structure can directly handle –10VDC, which

increases robustness and also allows direct interface

to gate-drive transformers without using rectification

diodes. The inputs are also independent of supply

voltage and have a 20V maximum rating.

The switching node of the UCC27211A-Q1 (HS pin)

can handle –(24 - VDD) V maximum, which allows

the high-side channel to be protected from inherent

negative voltages caused by parasitic inductance and

stray capacitance. The UCC27211A-Q1 (TTL inputs)

has increased hysteresis that allows for interface

to analog or digital PWM controllers with enhanced

noise immunity.

The low-side and high-side gate drivers are

independently controlled and matched to 4ns between

the turn on and turn off of each other. An on-chip

120V rated bootstrap diode eliminates the external

discrete diodes. Undervoltage lockout is provided for

both the high-side and the low-side drivers which

provides symmetric turn on and turn off behavior and

forces the outputs low if the drive voltage is below the

specified threshold.