Low Power Current Mode Push-Pull PWM

文件：148.53 Kbytes 页数：7 Pages

TI

德州仪器

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1808 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converters and power management of notebook computers and so

文件：64.54 Kbytes 页数：6 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The μPA1808 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC c

文件：293.4 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 80 V (D-S) Super Trench Power MOSFET

FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Converter Ideal for hfigh-frequency swfitchfing and synchronous

文件：755.16 Kbytes 页数：9 Pages

VBSEMI

微碧半导体