丝印：UC2610N；Package：PDIP；DUAL SCHOTTKY DIODE BRIDGE

FEATURES Monolithic Eight-Diode Array Exceptional Efficiency Low Forward Voltage Fast Recovery Time High Peak Current Small Size DESCRIPTION This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The du

文件：945.66 Kbytes 页数：14 Pages

TI

德州仪器

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on. FEATURES • Thin surface mount package with heat spreader • 1.8 V drive available • Low on-state resistance RDS(on)1 =

文件：304.07 Kbytes 页数：11 Pages

RENESAS

瑞萨

P-Channel 60-V (D-S) MOSFET

文件：724.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：736.74 Kbytes 页数：9 Pages

VBSEMI

微碧半导体