具有 35V VDD 的航天级 3A/3A 双通道栅极驱动器

The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are • 3.0A Peak Current Totem Pole Output\n• 5 to 35V Operation\n• 25ns Rise and Fall Times\n• 25ns Propagation Delays\n• Thermal Shutdown and Under-Voltage Protection\n• High-Speed, Power MOSFET Compatible\n• Efficient High Frequency Operation\n• Low Cross-Conduction Current Spike\n• Enable and Shutdow;

TI

德州仪器

DUAL NON-INVERTING POWER DRIVER

文件：1.03049 Mbytes 页数：18 Pages

TI

德州仪器

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS =

文件：226.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (T

文件：59.23 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS =

文件：226.46 Kbytes 页数：10 Pages

RENESAS

瑞萨