丝印：UC1706L；Package：LCCC；Dual Output Driver

FEATURES • Dual, 1.5A Totem Pole Outputs • 40nsec Rise and Fall into 1000pF • Parallel or Push-Pull Operation • Single-Ended to Push-Pull Conversion • High-Speed, Power MOSFET Compatible • Low Cross-Conduction Current Spike • Analog, Latched Shutdown • Internal Deadband Inhibit Circuit •

文件：318.78 Kbytes 页数：11 Pages

TI

德州仪器

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

文件：60.61 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Super low on-resistance RDS(on)1 = 5.8 mΩ TYP. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ TYP. (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ TYP. (VGS = 4.0 V, ID = 7.0 A) • Low Ciss : Ciss = 3000 pF TYP. • Built-in G-S protectio

文件：226.58 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

文件：60.61 Kbytes 页数：8 Pages

NEC

瑞萨