UCC5880QDFCRQ1

Marking：UCC5880Q；Package：SSOP；UCC5880-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications

1Features •Dual-outputdriverwithrealtimevariabledrive strength –±15Aand±5Adrivecurrentoutputs –Digitalinputpins(GD*)fordrivestrength adjustmentwithoutSPI –3resistorsettingsR1,R2,orR1||R2 –Integrated4AactiveMillerclamporoptional externaldriveforMiller

UCC5881QDFCRQ1

Marking：UCC5881Q；Package：SSOP；UCC5881-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications

1Features •Dual-outputdriverwithrealtimevariabledrive strength –±15Aand±5Adrivecurrentoutputs –Digitalinputpins(GD*)fordrivestrength adjustmentwithoutSPI –3resistorsettingsR1,R2,orR1||R2 –Integrated4AactiveMillerclamporoptional externaldriveforMiller

ULC0506P6

Marking：UC56；Package：DFN1616P6；Transient Voltage Suppressors for ESD Protection

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsSixHighSpeedLines LowClampingVoltage WorkingVoltages:5V LowLeakageCurrent IEC61000-4-2(ESD):±15kV(air),±8kV(contact); IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) Applications USB3.0/

V62/04642-01XE

Marking：UCC2808A-1EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

V62/04642-01XE

Marking：UCC2808A-1EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

V62/04642-02XE

Marking：UCC2808A-2EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

V62/04642-02XE

Marking：UCC2808A-2EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

V62SLASH04642-01XE

Marking：UCC2808A-1EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

V62SLASH04642-02XE

Marking：UCC2808A-2EP；Package：SOIC；LOW POWER CURRENT MODE PUSH-PULL PWM

ControlledBaseline −OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof −40°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† DualOutputDriveStagesinPush-Pull Configuration

5962R8670412VYC

Marking：UC1843B-SP；Package：CFP；QML Class V, Radiation Hardened Current-Mode PWM Controller