UBFU520Y中文资料   DUAL NPN WIDEBAND SILICON RF TRANSISTOR  数据手册UTC规格书

描述 Description

The UTC UBFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UBFU520Y suitable for small signal to medium power applications up to 2 GHz.

特性 Features

Low noise, high breakdown RF transistor Minimum noise figure (NFmin) = 0.65 dB at 900 MHz Maximum stable gain 19dB at 900 MHz 11GHz fT silicon technology