PZU5.6DB2/DG

Marking：U9；Package：SOT353；Dual Zener diodes

1.1Generaldescription Dualisolatedgeneral-purposeZenerdiodesinSOT353(SC-88A)verysmall Surface-MountedDevice(SMD)standardplasticanddark-greenplasticpackages. 1.2Features 1.3Applications nGeneralregulationfunctions nNon-repetitivepeakreversepower dissipation:PZSM

PZU5.6DB2SLASHDG

Marking：U9；Package：SOT353；Dual Zener diodes

1.1Generaldescription Dualisolatedgeneral-purposeZenerdiodesinSOT353(SC-88A)verysmall Surface-MountedDevice(SMD)standardplasticanddark-greenplasticpackages. 1.2Features 1.3Applications nGeneralregulationfunctions nNon-repetitivepeakreversepower dissipation:PZSM

BD45311

Marking：U9；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BD45311G-TR

Marking：U9；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BD45311G-TR

Marking：U9；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BZX84J-C3V0

Marking：U9；Package：SOD-323F；Single Zener diodes

FSA551UCX

Marking：U9；Package：WLCSP；Dual SPST Depletion Mode Audio Switch

3SK223

Marking：U90；MOS FIELD EFFECT TRANSISTOR

RFAMPLIFIERFORCATVTUNER N-CHANNELSiDUALGATEMOSFIELD-EFFECTTRANSISTOR 4PINSMINIMOLD FEATURES •TheCharacteristicofCross-Modulationisgood. CM=101dBμTYP.@f=470MHz,GR=–30dB •LowNoiseFigure:NF1=2.2dBTYP.(f=470MHz) NF2=0.9dBTYP.(f=55MHz) •Hig

3SK224

Marking：U94；MOS FIELD EFFECT TRANSISTOR

RFAMPLIFIERFORUHFTVTUNER N-CHANNELSiDUALGATEMOSFIELD-EFFECTTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoiseFigure:NF=1.8dBTYP.(f=900MHz) •HighPowerGain:GPS=17dBTYP.(f=900MHz) •SuitableforuseasRFamplifierinUHFTVtuner. •AutomaticallyMounting:Emb

BSR17A

Marking：U92；Package：SOT-23；NPN switching transistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:BSR18A. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.