3-GHz Frequency Divider

Description U832BS and U834BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. ● U832BS divides by 2 ● U834BS divides by 4 ● Very low current consumption (typically 12 mA

文件：116.08 Kbytes 页数：6 Pages

Temic

3-GHz Frequency Divider

Description U832BS and U834BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. ● U832BS divides by 2 ● U834BS divides by 4 ● Very low current consumption (typically 12 mA

文件：116.08 Kbytes 页数：6 Pages

Temic

3 GHz的频率分频器

Temic

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA834TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e

文件：68.83 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：60.7 Kbytes 页数：10 Pages

NEC

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Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

文件：212.52 Kbytes 页数：14 Pages

RENESAS

瑞萨