SINGLE OUTPUT HALL EFFECT LATCH

文件：132.01 Kbytes 页数：3 Pages

UTC

友顺

SINGLE OUTPUT HALL EFFECT LATCH

The UTC U652 is a Integrated Hall sensor with latch designed for electronic commutation of brushless DCmotor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, acomparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis fo

UTC

友顺

SINGLE OUTPUT HALL EFFECT LATCH

文件：137.61 Kbytes 页数：3 Pages

UTC

友顺

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

文件：71.09 Kbytes 页数：8 Pages

NEC

瑞萨

P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

文件：1.05876 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The μPA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power s

文件：297.75 Kbytes 页数：10 Pages

RENESAS

瑞萨