N-Channel 650V (D-S)Power MOSFET

文件：1.90677 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.90678 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：U4N65H；Package：TO-251；650V N-Channel MOSFET

文件：1.36126 Mbytes 页数：10 Pages

WUMC

紫光国微

N-Channel 650V (D-S)Power MOSFET

文件：1.90678 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel power MOS tube

文件：540.65 Kbytes 页数：6 Pages

UMW

友台半导体

650V TRENCH GATE FIELD-STOP IGBT

 DESCRIPTION The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG4N65-S is suitable for the resonant or soft switching ap

文件：229.47 Kbytes 页数：4 Pages

UTC

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