丝印：U35；Package：SOT-23；NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BSR20 and BSR20A. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose switching and amplification • Especially used for telephony applications.

文件：67.54 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：U35；Package：SOT-23；NPN high voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BSR20 and BSR20A. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose switching and amplification • Especially used for telephony applications.

文件：137.5 Kbytes 页数：8 Pages

恩XP

丝印：U35；Package：SC70；LOW POWER, 1.8/2.5/3.3-V INPUT, 3.3-V CMOS OUTPUT, SINGLE SCHMITT-TRIGGER BUFFER GATE

1FEATURES • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.5 V (at V CC = 2.5 V) – 3.3 V to 2.5 V (at V CC = 2.5 V • Schmitt-Trigger Inputs Reject Input Noise and Provide Better Ou

文件：386.98 Kbytes 页数：16 Pages

TI

德州仪器

丝印：U35；Package：SC70；LOW POWER, 1.8/2.5/3.3-V INPUT, 3.3-V CMOS OUTPUT, SINGLE SCHMITT-TRIGGER BUFFER GATE

1FEATURES • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.5 V (at V CC = 2.5 V) – 3.3 V to 2.5 V (at V CC = 2.5 V • Schmitt-Trigger Inputs Reject Input Noise and Provide Better Ou

文件：386.98 Kbytes 页数：16 Pages

TI

德州仪器

丝印：U35；Package：SC70；LOW POWER, 1.8/2.5/3.3-V INPUT, 3.3-V CMOS OUTPUT, SINGLE SCHMITT-TRIGGER BUFFER GATE

1FEATURES • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.5 V (at V CC = 2.5 V) – 3.3 V to 2.5 V (at V CC = 2.5 V • Schmitt-Trigger Inputs Reject Input Noise and Provide Better Ou

文件：386.98 Kbytes 页数：16 Pages

TI

德州仪器

丝印：U35；Package：TUMT5；4V Drive PchSBD MOSFET

文件：134.81 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：U35N06A；Package：TO-251AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

PANJIT

強茂

Hybrid Quad Silicon Junction Field-Effect Transistor Array

Hybrid Quad Silicon Junction Field-Effect Transistor Array ● Analog Multiplier ● VHF Double-Balanced Mixer Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Gate Current 25 mA Continuous Device Power Dissipation 400 mW Power Dera

文件：99.44 Kbytes 页数：1 Pages

InterFET

Cordless Telephone Signal Processor

Description The programmable cordless phone signal processor includes all necessary low frequency parts such as microphone- and earphone amplifier, compander, preemphasis, deemphasis, scrambler, data management, power-supply management, as well as RF receiving parts such as IF converter, FM dem

文件：226.62 Kbytes 页数：17 Pages

Temic

Cordless Telephone Signal Processor

Description The programmable cordless phone signal processor includes all necessary low frequency parts such as microphone- and earphone amplifier, compander, preemphasis, deemphasis, scrambler, data management, power-supply management, as well as RF receiving parts such as IF converter, FM dem

文件：226.62 Kbytes 页数：17 Pages

Temic